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Electrical And Optoelectronic Properties Of p - PbSe / n - Si Heterojunction | ||
| Engineering and Technology Journal | ||
| Volume 24, Issue 1, January 2005, Pages 21-24 PDF (581.38 K) | ||
| Document Type: Research Paper | ||
| DOI: 10.30684/etj.24.1B.3 | ||
| Author | ||
| Uday Nayef | ||
| Dep. Of Applied Science University of technology. Baghdad-Iraq | ||
| Abstract | ||
| Abstract Electrical and optoelectronic properties of p - PbSe / n - Si heterojunction detector have been investigated . The electrical properties under dark condition show a rectifying behaviour with low rectification factor , and exhibits soft breakdown reverse current . C - V characteristics suggest that the fabricated diode was abrupt type , built in potential determined by extrapolation from C - V curve to the point ( V - 0 ) and it was equal to ( 2.25V ) . Results of I - V characteristics under illumination conditions with reverse bias voltage exhibit linear behaviour with no saturation limit | ||
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