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IR - Blind Visible Silicon Detector | ||
| Engineering and Technology Journal | ||
| Volume 24, Issue 1, January 2005, Pages 42-47 PDF (649.98 K) | ||
| Document Type: Research Paper | ||
| DOI: 10.30684/etj.24.1B.6 | ||
| Author | ||
| Khalid Al-Ta'ai | ||
| School Of Applied Sciences /University of Technology | ||
| Abstract | ||
| Abstract In the present paper , silicon p - n junction detector of 600 + 25 nm peak response has been characterized . This peak was obtained by depositing high purity Au thin film onto sensitive side of the p - n junction ( donor - side ) , this film reduces the responsivity in the near - IR region ( 800-1100 ) nm and leads to peak response at 600 nm . The white light photovoltaic characteristics , spectral responsivity , and quantum efficiency are greatly depended on the photon transmission of Au film . Experimental results showed that the detector responsivity in the near IR region was reduced to about 18.5 % from its initial value after depositing 30 nm Au film . | ||
| Keywords | ||
| Keywords: Visible photodetector; Au / p - n Si. 1 | ||
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