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High Speed Dual - Msm Photodiodes On InP : Fe | ||
| Engineering and Technology Journal | ||
| Volume 24, Issue 3, March 2005, Pages 237-244 PDF (1.05 M) | ||
| Document Type: Research Paper | ||
| DOI: 10.30684/etj.24.3A.4 | ||
| Author | ||
| Ali M. Mousa | ||
| Applied science Dept., University of Technology Baghdad-IRAQ | ||
| Abstract | ||
| Abstract:Metal - Semi Conductor - Metal ( MSM ) Photo detectors on semi - insulting Inp : Fe with a lateral planer structure ( double Schottky photodiode ) have been fabricated . the detector exhibits low dark currents of about 6 nA , an impulse response time of 15 psec . , Full width at half maximum ( FWHM ) ( 25 Psec . ) , and an internal quantum efficiency of 70 % , all at 10V bias . . Response time is almost independent on biasing voltage , while the dependence of photocurrent on biasing reflects the increasing in the quantum efficiency . The photocurrent increase linearly with incident power radiation for all bias voltage greater than 0.6v . | ||
| Keywords | ||
| Keywords : Lateral photodiode; Planer Schottky | ||
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