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On the Influence of Metal Deposition on Responsivity Peak of Cleaned Silicon Photodetector | ||
| Engineering and Technology Journal | ||
| Volume 24, Issue 3, March 2005, Pages 245-251 PDF (951.17 K) | ||
| Document Type: Research Paper | ||
| DOI: 10.30684/etj.24.3A.5 | ||
| Authors | ||
| Raid A. Ismail1; Khalid Z. Al - Ta'ai2; Manaf R. Ismail2 | ||
| 1Dep. of Applied science University of Technology-IRAQ. | ||
| 2Dep. of Applied science University of Technology Baghdad-IRAQ. | ||
| Abstract | ||
| Abstract In the present work , p - type Si wafer of ( 111 ) orientation and 3 0.cm resistivity had been doped with phosphor by thermal diffusion process to fabricate p - n junction detector . The main optoelectronic properties of the fabricated detectors were studied . Thin films of ultrapure Cu , Bi , Ag , and Al were deposited on the sensitive area of the detectors ( donor side ) . On the base of the transmission and absorption phenomena of the deposited films , peak response data of these detectors that conventionally at near IR ( 850-900 nm ) before deposition was reduced and resulted in peak response at 600 ± 25 nm after deposition . | ||
| Keywords | ||
| Keywords : Metals / p - nSi; Thermal Evaporation; Optoelectronic Properties | ||
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