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Analytical Investigation for the Effect of Carrier Concentration and Temperature on the Nonlinear Properties of the Semiconductor Lasers Operating at Near - Infrared Wavelengths | ||
| Engineering and Technology Journal | ||
| Volume 24, Issue 4, April 2005, Pages 147-159 PDF (1.55 M) | ||
| Document Type: Research Paper | ||
| DOI: 10.30684/etj.24.4.10 | ||
| Authors | ||
| Afnan Kamal Yousif; Efaan Tariq Salim; Oday Ata Hamadi | ||
| Laser Research Unit University of Technology | ||
| Abstract | ||
| Abstract In this work , we presented results of an analytical investigation for the effect of carrier concentration and temperature of the active layer on the induced nonlinear properties of the double - heterostructure or quantum well barrier semiconductor lasers operating at near infrared wavelengths . These results explained that the rate of amplified spontaneous emission is mainly produced from the spontaneous recombination process . Then the nonlinear behavior of such processmay affect laser operation with distortion and some instability for the modulated output beam . | ||
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