Influence of High Temperature on the Electrical Properties of GaN HEMT Devices: A Review

Yaseen, Mohammad; Sabah Ismail, Rand

doi:10.63463/kjes1148

	Influence of High Temperature on the Electrical Properties of GaN HEMT Devices: A Review
Kerbala Journal for Engineering Sciences (KJES)
Volume 4, Issue 4, December 2024, Pages 283-315 PDF (2.01 M)
Document Type: Review Article
DOI: 10.63463/kjes1148
Authors
Mohammad Yaseen^* ; Rand Sabah Ismail
Department of Electrical Engineering, College of Engineering, University of Mosul, Mosul, Iraq.
Abstract
GaN (Gallium Nitride) is one of the fastest-growing broadband semiconductor materials nowadays, and GaN HEMT (High Electron Mobility Transistors) provides a variety of possible uses in the fields of high frequency, high power, high temperature, and radiation resistance. Recently, GaN-based (HEMTs) has been broadly used in rising industries like 5G technology, new smart vehicles, unmanned aerial vehicles, and different applications because of their high power and high resistance. However, because HEMT devices have a high-power density, the self-heating effect will cause the junction temperature of the device will increase dramatically, negatively impacting the device's longevity and dependability. A particular kind of Field-Effect Transistor (FET) that uses a heterojunction structure to improve performance is called a high electron mobility transistor, or HEMT. This work provides a comprehensive analysis of how high temperatures affect electrical properties. Understanding and enhancing the performance of gallium nitride high electron mobility transistor devices requires understanding how high temperatures affect their electrical characteristics. Given the widespread usage of GaN HEMTs in high-frequency and high-power electronic applications, it is imperative to investigate the effects of elevated temperatures on their electrical characteristics.
Keywords
GaN; AlGaN/GaN; HEMT; high temperature; 2DEG

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