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Fabrication and Characterization Study of CdTe1-xSex /ZnTe Heterojunction | ||
| journal of kerbala university | ||
| Article 1, Volume 6, Issue 4, 2010, Pages 384-390 PDF (0 K) | ||
| Abstract | ||
| In the present work, the fabrication and study the electrical and some photovoltaic prpperties were carried out, for deposited thin( ZnTe)films with (200±0.05) nm thickness on a n-type CdTe1-xSex (x=0.4,0.5 and o.6) of polycrystalline structure by vapor deposition on clean corning glass substrate with (300 ±0.03) nm thickness under a vacuum pressure of the order (2x106 mbar),at Ts =473k.The results of (I-V)characteristics under dark conditions showed the junction was anisotopic type.And from (C-V)measurements,it was shown a junction of abrupt type.The obtained (0.80,0.83,0.88)V built in potential were determined by extrapolation of the curve (1/C2) to a point 1/C2=0.The photovoltaic results of the reverse bias(current-voltage) showed a high linearity response ,also the(Voc,Isc) results showed a linear behavior of the junction. | ||
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