- All Journals
- Al-Qadisiyah University
- Basrah University
- Kirkuk University
- Mosul University
- The Iraqi Borad for Medical Specialization
- University of Anbar
- University of Technology
- Al Mustafa University
- Al-Zahraa University for Women
- Alnoor University
- Kunooz University
- Misan University
- Ninevah University
- Tikrit University
- University of Al-Hamdaniya
- University of Kerbala
Design the Impact of Temperature on the Modulation Bandwidth of InGaAs Vertical Cavity Surface Emitting Lasers (VCSELs) for Efficient Optical Interconnect | ||
| Kirkuk Journal of Science | ||
| Volume 20, Issue 3, September 2025, Pages 31-40 PDF (385.95 K) | ||
| Document Type: Research Paper | ||
| DOI: 10.32894/kujss.2025.161544.1217 | ||
| Authors | ||
| Abdullah Ibrahim Abdullah* 1; Faten Adel Ismael Chaqmaqchee2 | ||
| 1Department of Physics, Faculty of Science and Health, Koya University, Kurdistan Region - Iraq | ||
| 2Department of Physics, Faculty of Science and Health, Koya University, Koya, Kurdistan Region - Iraq | ||
| Abstract | ||
| This simulation work, based on the design of an 850 nm InGaAs/AlGaAs quantum well (QWs) vertical cavity surface emitting laser (VCSEL), presents significant challenges, particularly due to the limitations of device bandwidth at higher temperatures. We propose a comprehensive modelling approach to optimize the dynamic performance of a VCSEL structure with an oxide aperture diameter of 6 µm, specifically to achieve higher bandwidth at lower bias currents. The MATLAB simulation evaluates the variation of critical parameters, such as threshold current, differential efficiency, output power, and small-signal modulation, across a wide operating temperature range. Our findings indicate that in static analysis, the threshold current exhibits a positive temperature dependence, increasing with rising temperature, while both differential efficiency and optical output power decrease. Dynamic analysis reveals that although the 3-dB modulation bandwidth reduces with temperature, the VCSEL maintains high-speed performance exceeding 36 GHz at 20 °C and 24 GHz at 120 °C under a bias current of 14 mA. The temperature dependence of the modulation current efficiency factor (MCEF) provides insight into optimizing VCSEL structures for reliable high-speed operation over broad thermal conditions. | ||
| Keywords | ||
| VCSEL; high-speed modulation; temperature stability; output power; optical interconnects | ||
|
Statistics Article View: 464 PDF Download: 440 |
||