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Electrical and Optoelectronic Characterization of CdTe¬1-xSex/ZnTe Heterojunction | ||
| journal of kerbala university | ||
| Article 1, Volume 7, Issue 1, 2011, Pages 353-362 PDF (0 K) | ||
| Authors | ||
| ; ; Raheem G.Kadhu | ||
| Abstract | ||
| Electrical and optoelectronic properties of CdTe¬1-xSex/ZnTe Heterojunctions(x=0.1,0.2,and 0.3) have been investigated .C-V characteristics suggest that the fabricated heterojunction was abrupt type, built in potential determined by extrapolation from C2 V curve to the point (V=0). Also from C-V measurements, we deduced that the built- in potential and the depletion layer width increases with increasing the value of x,while the charge carrier concentration decreases. The current-voltage characteristics of CdTe¬1-xSex/ZnTe Heterojunction for the forward bias at dark condition shows that the ideality factor values varies with varing the value of x. Both the short circuit current and the open circuit voltage increases with increasing the value of x.The spectral responsively has peak at (840)nm wavelength | ||
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