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Development of Cu-doped SnO₂ thin film sensors for enhanced ammonia detection at room temperature | ||
| Journal of University of Anbar for Pure Science | ||
| Volume 20, Issue 2, August 2026, Pages 264-273 PDF (2.13 M) | ||
| Document Type: Research Paper | ||
| DOI: 10.37652/juaps.2025.162051.1469 | ||
| Authors | ||
| Qutoof Shihab Shukr* 1; Mahir N. Thameel2; Jamal Fadhil Mohammad2 | ||
| 1Department of Physics, College of Education for Pure Science, University of Anbar, Anbar, Ramadi, Iraq | ||
| 2Department of Physics, College of Education for Pure Science, University Of Anbar, Anbar, Iraq | ||
| Abstract | ||
| In this study, Cu-doped tin dioxide (SnO₂) thin films were successfully synthesized using the thermochemical decomposition method at a deposition temperature of 350 °C and a precursor concentration of 0.02 M. Copper was introduced at doping levels of 3%, 5%, and 7% to systematically investigate its effects on the structural, morphological, electrical, and gas-sensing characteristics of the SnO₂ films. X-ray diffraction (XRD) confirmed the retention of the tetragonal rutile structure in all samples, with Cu incorporation leading to a reduction in crystallite size and peak shifts indicative of strain and defect formation. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) analyses revealed progressive grain refinement and increased surface roughness with increasing Cu content. Hall-effect measurements demonstrated that Cu doping enhanced carrier mobility and electrical conductivity, with the 5% Cu-doped film exhibiting the most favorable transport properties. Room-temperature gas-sensing measurements using ammonia (NH₃) showed that the 5% Cu-doped SnO₂ film achieved the highest response, with a sensor response (Ra//Rg) of approximately 3.4 at 150 ppm, a response time of 22 s, a recovery time of 35 s, and excellent cyclic stability. Compared with the undoped film, this result corresponds to an estimated 160% improvement in sensing performance. These findings highlight the potential of moderately Cu-doped SnO₂ thin films for use in high-performance NH₃ sensors operating at room temperature (25 °C). | ||
| Keywords | ||
| Copper-modified SnO₂ films; Electrical conductivity; NH₃ gap sensor response; Structural and morphological analysis | ||
| References | ||
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