I. Easa, S., A. Emshary, C., M. Hassan, R. (2011). Carrier Excitation Energies from a QD to OCL, RMS of Relative QD-Size Fluctuations and Temperature Dependence of QDL. , 3(1), 146-156.
S. I. Easa; C. A. Emshary; R. M. Hassan. "Carrier Excitation Energies from a QD to OCL, RMS of Relative QD-Size Fluctuations and Temperature Dependence of QDL". , 3, 1, 2011, 146-156.
I. Easa, S., A. Emshary, C., M. Hassan, R. (2011). 'Carrier Excitation Energies from a QD to OCL, RMS of Relative QD-Size Fluctuations and Temperature Dependence of QDL', , 3(1), pp. 146-156.
I. Easa, S., A. Emshary, C., M. Hassan, R. Carrier Excitation Energies from a QD to OCL, RMS of Relative QD-Size Fluctuations and Temperature Dependence of QDL. , 2011; 3(1): 146-156.

Carrier Excitation Energies from a QD to OCL, RMS of Relative QD-Size Fluctuations and Temperature Dependence of QDL

JOURNAL OF THI-QAR SCIENCE
Article 1, Volume 3, Issue 1, 2013, Pages 146-156
Authors
S. I. Easa; C. A. Emshary; R. M. Hassan
Abstract
AbstractIn this work, we study the characteristic temperature of a quantum dot laser (QDL) in presence of internal optical loss and quantum efficiency. The control parameters (the constant component of internal loss coefficient, effective cross section, carrier excitation energies from a QD to the optical confinement layer (OCL), and the root mean square (RMS) of relative QD-size fluctuations) are used for achieving free carrier density in the OCL and threshold current density and its component.
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