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Electron Transfer Between Exited Cresyl Violet ( ) Dye And Semiconductors At A Cetonitrile Solvent | ||
| JOURNAL OF THI-QAR SCIENCE | ||
| Article 1, Volume 2, Issue 3, 2011, Pages 213-221 | ||
| Author | ||
| Abstract | ||
| Abstract The Calculation of the rate constant of electron transfer reaction is demonstrated for interfacial electron transfer from the excited cresyl violet( ) dye molecule to the conduction band of Tin Dioxide ( ),and Indium Tin Oxide(ITO) semiconductor. The reorganization energies λ and the driving free energies were calculated when it is assumed that the electron transfer from the excited dye molecule to the acceptor states in the conduction band of the semiconductors is proportional to the concentration of the electron at the interface surfaces. In accordance with a weak coupling approximation, the coupling matrix element V can be expressed as a coupling of the wave- functions between excited state molecule dye and the acceptor state of semiconductors. The result of electron transfer studies show that the electron transfer is effective in dye system than / at a cetonitrile solvent.Key words: Crysel violet dye – semiconductor interface, Electron transfer. | ||
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