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Calculation of Energy Band gap of Porous Silicon Based On The Carrier Transport Mechanisms | ||
| Engineering and Technology Journal | ||
| Article 6, Volume 25, Issue 10, 2007, Pages 1143-1148 PDF (137.79 K) | ||
| DOI: 10.30684/etj.25.10.4 | ||
| Author | ||
| Alwan M.Alwan | ||
| Abstract | ||
| The energy bandgap of photoluminescence porous silicon is calculated based on the analysis of the current-voltage characteristics and the measurements of the thermal activation energy of the zero bias and reverse bias currents of PS/n-Si porous silicon diodes at different temperatures. The 2.1 eV bandgap resulting from these electrical measurements agrees well with 2 eV measured in PL spectra. | ||
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