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A Study On the Structure and Electrical Properties of Pbo.9Sn0.1Se/Si Heterojunction | ||
| Engineering and Technology Journal | ||
| Article 7, Volume 25, Issue 10, 2007, Pages 1149-1153 PDF (145.1 K) | ||
| DOI: 10.30684/etj.25.10.5 | ||
| Author | ||
| Alwan M. Alwan | ||
| Abstract | ||
| In this work, as Study on the structural and electrical properties of Pbo.9Sn0.1Se/Si hetrojunction was made by depositing compound of Lead, Tin and Selenide film on Si by thermal evaporation. XRD diffraction analysis of the film, shows the dominant crystal orientation is (200) as well as (Pbo.9Sn0.1Se) film deposited is polycrystalline structure. Electrical properties of Pbo.9Sn0.1Se/Si heterojunction detector have been investigated. The electrical properties under dark condition show a rectifying behavior with low rectification factor, and exhibit soft breakdown reverse current. C-V characteristics suggest that the fabricated diode was abrupt type, built in potential determined by extrapolation from 1/C2-V curve to the point (V=0) and it was equal to (0.4V). | ||
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