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The Effect of Annealing Temperatures on Optical and Electrical Properties of PbTe Thin Films | ||
| Engineering and Technology Journal | ||
| Article 10, Volume 25, Issue 10, 2007, Pages 1171-1183 PDF (216.68 K) | ||
| DOI: 10.30684/etj.25.10.8 | ||
| Authors | ||
| Akram N . Al-Mashhadany; Noor S. Sadeq | ||
| Abstract | ||
| The study was carried out by the preparing of PbTe thin films and studying the effect of annealing temperatures on electrical and optical properties. The PbTe thin films have been prepared by thermal evaporation in a vacuum of (2*10-5) Torr with thickness 500nm at room temperature and annealed at different annealing temperatures of (373,423,473)K for 30 min. The electrical measurements show that the PbTe thin films have two kinds of activation energy which increases with increasing annealing temperature. The Hall Effect measurements prove that thin films are n-type at room temperature and convert to p-type by annealing temperature and it is found that NH decreases with increasing annealing temperature but μH increases with increasing annealing temperature. The optical measurements show that the PbTe thin films have direct energy gap which show that energy gap increases with increasing annealing temperatures and it is found the transmittance increases with increasing annealing temperatures | ||
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