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Enhanced the response time of the P-N junction Photodetector | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 26, Issue 4, 2008, Pages 423-428 PDF (400.87 K) | ||
| DOI: 10.30684/etj.29.4.3 | ||
| Authors | ||
| Khawla S. khashan; Evan T. Salem; Mukaram A. Fakhery | ||
| Abstract | ||
| In the present work, the response time of p-n junction photo-detector has been achieved by using the rapid thermal annealing (RTA) technique in which the annealing time has been ranged from (5-25) s at (773 K) the result shows a good improvement in the time constant of the detector and it has beast result at (15) s which reach to (26.81) ns for (905) nm wavelength of GaAlAs laser | ||
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