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Optoelectronic properties of ZnO/PS/n-Si Heterojunctions | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 26, Issue 4, 2008, Pages 442-448 PDF (342.84 K) | ||
| DOI: 10.30684/etj.29.4.5 | ||
| Author | ||
| Khawla S. Khashan | ||
| Abstract | ||
| In this work a colloid of nanocrystalline ZnO particles is prepared by chemical method, and then sprayed on porous silicon substrate which is prepared by electrochemical etching under a current density of 15mA/cm2 for 10 min. The initial radius of the ZnO particles is found to be (2.2 nm). FTIR spectra exhibit the presence of Zn – O bond which indicates the formation of ZnO particles. Also spectra reveals the formation of SiHx (x=1-2) and Si-O bond which indicates the presence of porous layer. High performance rectifying was obtained, with high photoresponsivety of 0.54 A/W at 400 nm. The corresponding quantum efficiency was 166.7%.The results show that ZnO on porous silicon (PS) structures will act as good candidates for making highly efficient photodiodes. | ||
| Keywords | ||
| ZnO nanoparticles; ZnO; PS device | ||
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