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Study Optoelectronic Properties of Ag2O Heterojunction Prepered by Thermal Oxidation Technique | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 26, Issue 5, 2008, Pages 570-578 PDF (419.38 K) | ||
| DOI: 10.30684/etj.29.5.10 | ||
| Author | ||
| Khalid Z. Yahia | ||
| Abstract | ||
| Highly (101)-oriented p-Ag2O thin film with high electrical resistivily was grown by thermal oxidation (TO) on clean monocrystalline p-type Si without any post- deposition annealing. From optical transmittance and absorptance data, the direct optical band gap was found to be 1.4eV. The electrical and photovoltaic properties of Ag2O/Si isotope heterojunction were examined in the absence of any buffer layer. Ideality factor of heterojunction was found to be 3.9. Photoresponse result revealed that there are two peaks located at. 750 nm and 900nm . | ||
| Keywords | ||
| Heterojunction; thermal oxidation; photovoltaic | ||
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