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Fabrication and Study Se/Sb on Silicon Detector Heterojunction | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 26, Issue 6, 2008, Pages 620-628 PDF (269.73 K) | ||
| DOI: 10.30684/etj.29.6.3 | ||
| Author | ||
| Khalid Z. Yahiya | ||
| Abstract | ||
| The optical response characteristics of Se/Sb thin film heterojunction deposited on a p-type silicon substrate were studied. Results indicated that the obtained isotype heterojunction is linearly graded and has 0.8V built-in potential. Also, the maximum spectral responsivity and maximum quantum efficiency were obtained at the region of (600- 650) nm and the detectivity was about 7.77x1010 cm.Hz 1/2.W-1. Response time of the manufactured detector was about 225ns. This work is a good attempt to manufacture the heterojunction detector from V and VI elements. | ||
| Keywords | ||
| Isotype heterojunction; based devices; Sbx; Sex devices; Optical response | ||
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