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Preparation and the study optical and electrical properties of thin films for optoelectronic applications | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 26, Issue 7, 2008, Pages 824-828 PDF (432.98 K) | ||
| DOI: 10.30684/etj.26.7.8 | ||
| Authors | ||
| Khalid Z. Yahiya; Ammar H. Jraiz; Uday M. Nayef | ||
| Abstract | ||
| Conductive transparent In2O3 thin films with (222) preferred orientation were prepared by thermal oxidation (TO) in static air of indium thin films at condition (250°C/25 min). Detailed structural, electrical, and optical characteristics of the film are presented. The data are interpreted to give a direct band gap of (3.6) eV and indirect band gap of (2.5) eV. The In2O3 film has sheet resistance as low as (20)Ω/□ . in absence of any post-deposition annealing conditions. The mobility of these films was estimated to be (31) cm2. V-1. s-1. | ||
| Keywords | ||
| thermal oxidation; thin film; figure of merit | ||
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