A. Hamadi, O., A.M. Bader, B., K. Yousif, A. (2008). Electrical Characteristics of Silicon p-n Junction Solar Cells Produced by Plasma-Assisted Matrix Etching Technique. , 26(8), 995-1001. doi: 10.30684/etj.26.8.10
Oday A. Hamadi; Ban A.M. Bader; Afnan K. Yousif. "Electrical Characteristics of Silicon p-n Junction Solar Cells Produced by Plasma-Assisted Matrix Etching Technique". , 26, 8, 2008, 995-1001. doi: 10.30684/etj.26.8.10
A. Hamadi, O., A.M. Bader, B., K. Yousif, A. (2008). 'Electrical Characteristics of Silicon p-n Junction Solar Cells Produced by Plasma-Assisted Matrix Etching Technique', , 26(8), pp. 995-1001. doi: 10.30684/etj.26.8.10
A. Hamadi, O., A.M. Bader, B., K. Yousif, A. Electrical Characteristics of Silicon p-n Junction Solar Cells Produced by Plasma-Assisted Matrix Etching Technique. , 2008; 26(8): 995-1001. doi: 10.30684/etj.26.8.10

Electrical Characteristics of Silicon p-n Junction Solar Cells Produced by Plasma-Assisted Matrix Etching Technique

Engineering and Technology Journal
Article 1, Volume 26, Issue 8, 2008, Pages 995-1001    PDF (307.09 K)
DOI: 10.30684/etj.26.8.10
Authors
Oday A. Hamadi; Ban A.M. Bader; Afnan K. Yousif
Abstract
In this work, plasma-induced matrix etching technique was used to fabricate p-n junction
solar cells and their electrical characteristics were studied. Results showed reasonable
improvement in solar cell characteristics when compared to the characteristics of the
cells fabricated without etching process or by conventional thermal evaporation
technique. The maximum conversion efficiency of the fabricated cells was about
(2.15%) at irradiation power of (90W/cm2) and the fill factor was (56.90%).
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