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In-nSiC schottky photodiode ; Fabrication and Study | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 26, Issue 9, 2008, Pages 1110-1115 PDF (210.62 K) | ||
| DOI: 10.30684/etj.26.9.6 | ||
| Authors | ||
| Khalid Z. Yahiya; Ammar H. Jraiz; Abdulla Khudiar Abass | ||
| Abstract | ||
| In the present work , schottky photodiode have been mode on n-type SiC by depositing of thin layer of In . electrical characteristics included I-V (dark and illumination ) have been investigated . Ideality factor is 1.6 and barrier height is 0.53 eV was calculated from I-V and Isc-Voc characteristics, Ideality factor is 1.7 and barrier height found to be 0.64 eV, and from optoelectronic characteristics have found sensitivity results show that peak response of photodiode was 550nm . | ||
| Keywords | ||
| photodiode; Sic; Schottky contact | ||
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