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High-Speed Response Si PIN Photodetector Fabricated and Studied for Visible and Near Infrared Spectral Detection | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 26, Issue 10, 2008, Pages 1164-1170 PDF (329.12 K) | ||
| DOI: 10.30684/etj.26.10.2 | ||
| Author | ||
| Khalid Z. Yahiya | ||
| Abstract | ||
| In the present work , PIN photodetector has been fabricated by vacuum evaporation technique, Al was evaporated on top side of an intrinsic – type silicon and In was evaporated on down side and doped for each sides of an intrinsic silicon with thermal diffusion technique using a furnace system, in this method PIN photodetector is made. The optoelectronic and electrical properties of photodetector were studied ,PIN has spectral responsivity in visible and near infrared region and has peak responsivity at wavelength 900nm ,I-V characteristic under dark condition the ideality factor is 3.2 and builtin- potential was determined by extrapolation of the curve (1/C3) to a point 1/C3=0 equal 0.8v. a high speed response for the photodetector was determined , it is equal less than 2.35nS. | ||
| Keywords | ||
| Photodetector; vacuum evaporation; thermal diffusion | ||
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