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Fabrication and Characteristics Study Of CdO/Si Heterojunction | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 26, Issue 12, 2008, Pages 1476-1483 PDF (951.56 K) | ||
| DOI: 10.30684/etj.26.12.4 | ||
| Authors | ||
| Khalid Z. Yahiya; Ammar H. Jareeze; Ammar M. Al-Baldawi | ||
| Abstract | ||
| In the present paper CdO/Si heterojunction has been prepared by spray pyrolysis method , electrical characteristics include I-V , C-V , were studied the build-inpotential equal 1.7 eV and optoelectronic characteristics include I-V illumination condition, photovoltaic, responsivity , quantum efficiency were studied . the ideality factor to be 2.93 and short circuit photocurrent 170μA, open circuit photovoltge 120mV at AM1 condition and two peaks responsivity were found , first peak at region 600±20nm this peak due to absorb of light in CdO through band-to-band absorption while second region at 800±30nm which due to the Si bandgap. | ||
| Keywords | ||
| Cadmium oxide; Heterojunction; thermal oxide; Transparent conducting oxides; spray pyrolysis | ||
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