Using chemical etching technique to determination the crystal orientation for silicon wafer

محمد, ساريه ذياب; سلطان, فاطمه عريص; عبدالمجيد, اقبال

doi:10.30684/etj.28.8.19

	Using chemical etching technique to determination the crystal orientation for silicon wafer
Engineering and Technology Journal
Article 1, Volume 28, Issue 8, 2010, Pages 391-397 PDF (243.13 K)
DOI: 10.30684/etj.28.8.19
Authors
ساريه ذياب محمد; فاطمه عريص سلطان; اقبال عبدالمجيد
Abstract
Abstract The crystal orientation of a semiconductor play a significant role to effects the characteristics of manufactured semiconductor solar cells and the optical detectors. In this research we use the chemical etching technique and microscopic testing to determine the crystal orientation of the silicon wafer, where mechanical polishing and Wet Etching described the geometric dislocations pits which refers to thecrystallographicorientation. Microscopic examination has been describing differences geometric dislocations pits which reflected from plane (111) in the silicon wafer, by the impact of different chemical solutions. CP-4 etch appear dislocations pits in geometric forms flat trigonometric, while using KOH solution show that pits in conical shape which refers to the vector [111] for silicon wafer. In this work acid chromium oxide solution has been used to showing the geometric dislocations pits of plane (100) in the forms of four fold flat symmetry which refers to that plane in Silicon wafer, as the distribution of Miller Indices in the cubic system.
Keywords
crystal Orientation of Semiconductor; crystallographic Orientation of Semiconductor v

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