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Surface Area of Porous Silicon | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 28, Issue 9, 2010, Pages 1728-1734 PDF (320.79 K) | ||
| DOI: 10.30684/etj.28.9.3 | ||
| Authors | ||
| Mayasa AbdulWahid Shanon; Mayada H. Mouhsen1; Bassam G. Rasheed2 | ||
| 1Applied Sciences Department, University of Technology/Baghdad | ||
| 2College of Dentistry, University of Baghdad /Baghdad | ||
| Abstract | ||
| The surface area of porous silicon layers produced by different methods has been measured in this work. It is found that the surface area of the porous silicon is optimum when high laser power density is used to etch n –type silicon wafer via the laser induced etching process compared with that for porous silicon produced by lower laser power density or by electrochemical etching process. A scanning electron microscope (SEM) micrographs were used to estimate the surface area. The surface area of the porous layer is strongly dependent on the porous layer geometry and its depth. | ||
| Keywords | ||
| porous silicon; laser induced etching | ||
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