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A Study Of Photoelectrical Characteristics Of (CdS/CdTe) Heterojunction | ||
| Al-Rafidain Engineering Journal (AREJ) | ||
| Article 11, Volume 19, Issue 2, 2011, Pages 68-76 PDF (0 K) | ||
| DOI: 10.33899/rengj.2011.27347 | ||
| Author | ||
| Bashar A.H. AL-abbasy | ||
| Abstract | ||
| Abstract: In this work, we report the photoelectrical properties of the (CdS/CdTe) structure as a function of the reverse bias voltage, light intensity and incident power wavelength. The investigated photodetection performance is located in the visible light spectrum situated at wavelength range (488-595 nm) and the maximum photocurrent at (505 nm). The photodetection parameters such as quantum efficiency, responsivity, and detectivity have been studied as a function of incident power wavelength at different reverse bias voltages. These studies gave somewhat low values of such parameters which describe the performance of any photodetector | ||
| Keywords | ||
| KEYWORDS; CdS | ||
|
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