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Effect of Rapid Thermal Annealing on CuO Thin Film Prepared by PLD | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 28, Issue 10, 2010, Pages 495-507 PDF (309.29 K) | ||
| DOI: 10.30684/etj.28.10.20 | ||
| Authors | ||
| مسلم فاضل جواد; هبه سلام طارق | ||
| Abstract | ||
| In this study, thin films of CuO were deposited on glass substrates using thermal laser evaporation technique. The structure characterization of the film was carried out with XRD. The results of XRD show that all samples have a polycrystalline .The optical measurements on the deposited films were performed to determine the transmission spectrum and the absorption coefficient as a function of incident wave length. Then from the optical parameters, extinction coefficient, dielectric constant with two part real and imaginary part, value and type of energy gap, type of the dominant absorption processes, real and complex refractive index as functions of incident photon energy, were determined. The energy gap is found to be equal to 1.8 eV for CuO that is direct transfer . This results is agree to the results given by other researchers. Then thin films annealed thermal rapid by using halogen lamp .The annealing influence very much to thin film by addition an enhancement to the thin films | ||
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