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A Theoretical Investigation Of Reaction Properties In Highly- Doped N-Gaas At MIR Wavelengths | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 28, Issue 12, 2010, Pages 584-593 PDF (219.37 K) | ||
| DOI: 10.30684/etj.28.12.19 | ||
| Authors | ||
| عدويه جمعه حيدر; عدي عطا حمادي; علي احمد يوسف | ||
| Abstract | ||
| In this work, a theoretical multi-layer structure was presented to investigate the nonlinear optical behavior induced by free electrons in a thin layer of highly-doped n-type GaAs at the MIR wavelengths. The multi-layer structure is considered to enhance absorption by a semiconductor thin layer. The intensity-dependent reflection properties were analyzed and the results explained the possibility to increase the optical sensitivity of the multi-layer structure compared to that in GaAs bulk. | ||
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