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Switching Study In CdS/CdTe Structures | ||
| Al-Rafidain Engineering Journal (AREJ) | ||
| Article 10, Volume 18, Issue 1, 2010, Pages 51-56 PDF (0 K) | ||
| DOI: 10.33899/rengj.2010.27988 | ||
| Author | ||
| Dr. L. S. Ali | ||
| Abstract | ||
| Abstract The paper reports preliminary data on the characteristics of a new electronic switching device based on CdS/CdTe hetero–junction. The device is polar and is switched from OFF to ON (WRITE) or ON to OFF (ERASE) by voltage opposite signs. The threshold voltage for WRITE operation is (3-4 V), depending on the device, and for ERASE is about (-2V). The OFF and ON resistance are typically 40MΩ, and 1.5kΩ respectively. Particularly notable features of the new memory device are its transition times (100µsec for both the WRITE or ERASE operations). Keywords:switching, semiconductor devices and materials. | ||
| Keywords | ||
| KEYWORDS; semiconductor devices and materials | ||
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