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The Effect of Grain Boundary on the electrical and photoelectrical characteristics of Au/p-Si Schottky Diode | ||
| Al-Rafidain Engineering Journal (AREJ) | ||
| Article 3, Volume 18, Issue 3, 2010, Pages 10-18 PDF (0 K) | ||
| DOI: 10.33899/rengj.2010.28455 | ||
| Author | ||
| Dr. Khalid Khaleel Mohamed | ||
| Abstract | ||
| Abstract This paper is intended to study the influence of the grain boundaries on the electronic and optoelectronic behavior of Au/P-Si Schottky diode. These diodes were fabricated by evaporation of gold layers onto polycrystalline silicon wafers using vacuum evaporation technique. The current-voltage characteristics at different grains boundary and temperatures, spectral response were investigated. It is found that the Schottky barrier height for Au/P-Si diode obtained form I-V and spectral response characteristics are depends mainly on the surface grain boundary density and state density. Keyword: Grain Boundary, Au/p-Si, Schottky Diode. | ||
| Keywords | ||
| Keyword; Schottky Diode | ||
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