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The Effect Of Thermal Oxidation Time On The Structure And Influence On Optical Properties For Porous Silicon Prepared By Photo Electrochemical Etching | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 27, Issue 4, 2009, Pages 727-735 PDF (407.66 K) | ||
| DOI: 10.30684/etj.27.4.9 | ||
| Authors | ||
| Alwan M.Alwan; Narges Z.Abd alzahra | ||
| Abstract | ||
| The morphological properties of the freshly and oxidized porous silicon at oxidation time (60, 90) sec were studied. A blue emission from PSi can be seen with eyes after thermal oxidation because the increasing of energy gab due to decreased silicon column (nano particles).Pore size and shape of n-type wafers are estimate and correlated with optical properties before and after rapid thermal oxidation (RTO). | ||
| Keywords | ||
| porous silicon; oxidation; Optical properties | ||
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