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The Effect of Thermal Annealing on the Diffusion Profile of Nickel in GaAs Substrates | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 27, Issue 5, 2009, Pages 880-885 PDF (161.78 K) | ||
| DOI: 10.30684/etj.27.5.2 | ||
| Author | ||
| Aseel A.K. Hadi | ||
| Abstract | ||
| Diffusion of nickel in GaAs has been studied at 950ºC. The diffusion was enhanced during limited interval and for different quantities of As. Nickel atoms had diffused in the beginning due to the interstitial movement of atoms but large number of nickel atoms occupies substantial locations in p-type GaAs lattice. Measurements performed to the samples have showed good agreement between the nickel atoms concentration and majority charge-carriers in p-type semiconductor (holes). Measurements explained that electrical conductivity of p-type samples was not due to system heating but to the diffusion of nickel atoms occupying sites of gallium atoms. | ||
| Keywords | ||
| GaAs; thermal annealing; diffusion | ||
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