- All Journals
- Al-Qadisiyah University
- Basrah University
- Kirkuk University
- Mosul University
- The Iraqi Borad for Medical Specialization
- University of Anbar
- University of Technology
- Al Mustafa University
- Al-Zahraa University for Women
- Alnoor University
- Kunooz University
- Misan University
- Ninevah University
- Tikrit University
- University of Al-Hamdaniya
- University of Kerbala
Saturation Gain Characteristics of Quantum-Well Semiconductor Optical Amplifier | ||
| ALNAHRAIN JOURNAL FOR ENGINEERING SCIENCES | ||
| Article 1, Volume 14, Issue 2, 2011, Pages 205-212 | ||
| Author | ||
| Alhuda A. Al-mfrji | ||
| Abstract | ||
| Recently, there is an increasing interest on quantum well (QW) semiconductor optical amplifier in optical communications and optical signal processing applications. This paper addresses the dependence of saturation power on QW structure parameters. Expressions are given to assess this dependency and the results indicate that the saturation power is a decreasing function of number of wells, well thickness, and amplifier length and it is almost independent of barrier thickness. | ||
| Keywords | ||
| Quantum; well; semiconductor; optical amplifier | ||
|
Statistics Article View: 94 PDF Download: 16 |
||