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Number of Quantum Well(s) Effects on GaN-Based VCSELs | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 29, Issue 9, 2011, Pages 1796-1803 PDF (236.63 K) | ||
| DOI: 10.30684/etj.29.9.14 | ||
| Author | ||
| Farah Z. Jasim | ||
| Abstract | ||
| Advanced numerical simulation program was used to analyze the performance of GaN based vertical cavity surface emitting laser (VCSEL) with single, double and triple quantum well(s) as active region. It was found that numbers of quantum well (QW) variation inside the active region is the most critical factor on the VCSEL performance. The lowest threshold current and highest in both the slope efficiency and differential quantum efficiency were observed when the well number is double (DQWs) at 415 nm VCSEL. This is ascribed to that for single quantum well (SQW), some of the gain begin to escape before lasing is achieved while for triple quantum wells (TQWs) while are separated by many thick barriers, then transport carriers between wells will be inefficient. As a result, a non-uniform carrier distribution may result. | ||
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