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The performance of Hydrogenated Amorphous Silicon Charge Coupled Devices | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 29, Issue 14, 2011, Pages 2998-3005 PDF (216.42 K) | ||
| DOI: 10.30684/etj.29.14.15 | ||
| Author | ||
| Saad Al-Sabbagh | ||
| Abstract | ||
| From gas phase and by glow-discharge method Hydrogenated Amorphous Silicon Charged Coupled devices have been deposited. A detailed practical study has been carried out. The most important parameter , the transfer efficiency , was found to depend strongly upon the device gate number and the clock frequency. The best efficiency achieved was 97.7% and that was at frequency of 250 Hz. | ||
| Keywords | ||
| Amorphous Silicon; Charge Couple Devices | ||
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