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Electrical Properties of Ba,Ho Doped PbI2 | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 27, Issue 7, 2009, Pages 1317-1323 PDF (176.41 K) | ||
| DOI: 10.30684/etj.27.7.8 | ||
| Authors | ||
| Shatha Sh. Jamil; Ali M. Mousa | ||
| Abstract | ||
| Barium and Holmium have been introduced into polycrystalline lead iodide during solution growth of thin films. Electrical characterization (current vs. voltage measurements , resistivity, carrier concentration and mobilities as a function of the doping concentrations) clearly demonstrates that both dopants introduce donor level in the PbI2 band gap and compensate for the native acceptor defects of lead iodide, Barium as a dopant having the greater influence. | ||
| Keywords | ||
| electerical properties of PbI | ||
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