A. A. Sultan, O., E. Al-Samarai, A., A. Ismail, R. (2009). Construction of Anisotype CdS/Si Heterojunction and Lineup Using I-V and C-V Measurements. , 7(10), 30-34.
Omar A. A. Sultan; Abdul-Majeed E. Al-Samarai; Raid A. Ismail. "Construction of Anisotype CdS/Si Heterojunction and Lineup Using I-V and C-V Measurements". , 7, 10, 2009, 30-34.
A. A. Sultan, O., E. Al-Samarai, A., A. Ismail, R. (2009). 'Construction of Anisotype CdS/Si Heterojunction and Lineup Using I-V and C-V Measurements', , 7(10), pp. 30-34.
A. A. Sultan, O., E. Al-Samarai, A., A. Ismail, R. Construction of Anisotype CdS/Si Heterojunction and Lineup Using I-V and C-V Measurements. , 2009; 7(10): 30-34.

Construction of Anisotype CdS/Si Heterojunction and Lineup Using I-V and C-V Measurements

Iraqi Journal of Physics
Article 1, Volume 7, Issue 10, 2009, Pages 30-34
Authors
Omar A. A. Sultan; Abdul-Majeed E. Al-Samarai; Raid A. Ismail
Abstract
Near-ideal p-CdS/n-Si heterojunction band edge lineup has been investigated for the first time with aid of I-V and C-V measurements. The heterojunction was manufactured by deposition of CdS films prepared by chemical spray pyrolysis technique (CSP) on monocrystalline n-type silicon. The experimental data of the conduction band offset Ec and valence band offset Ec were compared with theoretical values. The band offset Ec=530meV and Ev=770meV obtained at 300K. The energy band diagram of p-CdS/n-Si HJ was constructed. C-V measurements depict that the junction was an abrupt type and the built-in voltage was determined from C-2-V plot.
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