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Crystal Growth of High – Purity Bi2Se3 and Study of Crystal Structure | ||
| Iraqi Journal of Physics | ||
| Article 1, Volume 7, Issue 10, 2009, Pages 47-50 | ||
| Authors | ||
| Ghuson H.Mohammed; ; A.H.Abd-Al Kathum Al Mohanna | ||
| Abstract | ||
| The Bi2Se3 compound was synthesis by fusing initial compounds consisting of extra pure elements in stoichiometric ratio from elements compound, charged inside quartz ampoule. The crystal growth of Bi2Se3 carried out using Brighaman technique process from melting f (Bi+Se ) at temperature of 810 ºC for about 48 hrs. Single crystal of Bi2Se3 has been grown in direction (211) after slow cooling on account of heat gradient to zone furnaces at cooling rate (1-3) C/hr. The structure study of the compound was determined by x-ray diffraction technique, which it has bismuthinite structure and orthorhombic unit cell with lattice parameters of a=10.2678 Å, b=11.2392 Å and c=5.1737 Å | ||
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