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Room Temperature Photodetector Based on ANISOTYPE (n-p) Ge-Si Heterojunction | ||
| Iraqi Journal of Physics | ||
| Article 1, Volume 7, Issue 9, 2009, Pages 37-41 | ||
| Author | ||
| Raid A. Ismail | ||
| Abstract | ||
| In this work we present a detailed study on anisotype nGe-pSi heterojunction (HJ) used as photodetector in the wavelength range (500-1100 nm). I-V characteristics in the dark and under illumination, C-V characteristics, minority carriers lifetime (MCLT), spectral responsivity, field of view, and linearity were investigated at 300K. The results showed that the detector has maximum spectral responsivity at λ=950 nm. The photo-induced open circuit voltage decay results revealed that the MCLT of HJ was around 14.4 μs. | ||
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