- All Journals
- Al-Qadisiyah University
- Basrah University
- Kirkuk University
- Mosul University
- The Iraqi Borad for Medical Specialization
- University of Anbar
- University of Technology
- Al Mustafa University
- Al-Zahraa University for Women
- Alnoor University
- Kunooz University
- Misan University
- Ninevah University
- Tikrit University
- University of Al-Hamdaniya
- University of Kerbala
Study of optical properties for Ge - GaAs Heterojunction | ||
| Baghdad Science Journal | ||
| Article 1, Volume 8, Issue 2, 2011, Pages 456-464 | ||
| Authors | ||
| Ali S. Ferhan; Ehsan M. Abbas; Hussein Abbas Hassan | ||
| Abstract | ||
| In this work, heterojunction have been fabricated utilizing gallium arsenide (Bulk-n-GaAs) and (Epitaxy-n-GaAs) wavers as substrate, an amorphous germanium(Ge)was evaporated as thin film on the substrate, using thermal evaporation technique, lastly, electrical characteristics have been studied. All samples were annealed at temperature 637K for 30 minutes. Optical properties have been studied for Ge/Bulk n-GaAs contact and Ge/Epitaxy-n-GaAs contact, photocurrent as a function of the incident wavelength was measured to calculate the detector parameters. It was shown that the Spectral Responsivity Ge/Bulk n-GaAs was (0.2A/W) at (700nm), (0.191A/W) at (1300nm) and for Ge/Epitaxy-n-GaAs (0.148A/W) at (700nm), (0.145A/W) at (1300nm). | ||
| Keywords | ||
| GaAs | ||
|
Statistics Article View: 13 PDF Download: 2 |
||