Bias-Voltage Dependence on Thermoelectric Cooler Coefficient for Al0.7Ga0.3As and In0.2Ga0.8As SQW Laser Diode

Q. Mawlud, Saman

	Bias-Voltage Dependence on Thermoelectric Cooler Coefficient for Al0.7Ga0.3As and In0.2Ga0.8As SQW Laser Diode
Tikrit Journal of Pure Science
Article 1, Volume 16, Issue 4, 2011, Pages 165-170
Author
Saman Q. Mawlud
Abstract
The theoretical investigation of thermoelectric phenomena in single quantum well (SQW) laser diode was described in this work. Diode laser devices can be modeled by introducing a bias-dependent Peltier coefficient at interfaces that takes into account the variation of the carriers’ average transport energy. The effective Peltier coefficient can vary as a function of applied bias voltage, and can give rise to interfacial thermoelectric cooling or heating depending on device parameters. The temperature dependences of the threshold current at different temperature are investigated for the laser diode, a record characteristic temperature T0=110 K has been achieved for AlGaAs and T0=50 K for InGaAs. The bias voltage dependent bipolar Peltier coefficient is modeled for SQW laser diodes, and the different regimes of bias voltage for which cooling is achieved are described. In this work two type of SQW laser diode were studied they are AlGaAs and InGaAs. The comparison of the theoretically calculated laser parameters; namely, confinement factor, threshold current density and the output power density of SQW GaAs/Al0.7Ga0.3As and GaAs/In0.2Ga0.8As laser showed that the confinement factor is a very important parameter for the performance of this quantum well laser.
Keywords
Thermoelectric cooler; Confinement Factor; SQW laser diode

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