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Fabrication of Silicon Doped Indium Detector by Laser Radiation Method | ||
| Tikrit Journal of Pure Science | ||
| Article 1, Volume 15, Issue 2, 2010, Pages 318-324 | ||
| Author | ||
| Yassin.H. Mahmood | ||
| Abstract | ||
| Silicon doped -Indium detector has been constructed in this research (n -type) single crystal with (111) direction using laser diffusion impurity. The results showed that the diode (detector) was junction abrupt have spectral response was about (0.4A/W) at wave length (0.85µm) and rise time around (80 ns). | ||
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