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ELECTRICAL PROPERTIES OF Znx Se1-x THIN FILMS PREPARED BY THERMAL EVAPORATION METHOD | ||
| DIYALA JOURNAL OF ENGINEERING SCIENCES | ||
| Article 9, Volume 2, Issue 2, 2009, Pages 77-87 PDF (0 K) | ||
| Author | ||
| Habeeb Shalal Jasim | ||
| Abstract | ||
| Semi conducting Znx Se1-x thin films were prepared at 480nm thickness on glass substrates at room temperature using vacuum evaporation technique .The electrical properties of Znx Se1-x thin films have been investigated , such as dc conductivity and Hall effect. The investigation showed that the composition range 0≤x≤0.3 has an influence on the electrical properties of the Znx Se1-x thin films . The dc conductivity experiment in the range of temperature 293-423 ok gave two activation energies Ea1& Ea2 which represented two types of conduction mechanisms . Ea1 & Ea2 have values 0.6 & 0.1eV respectively for x=0, while 1.01 &0.107 eV for x=0.3. Also the study showed that the dc conductivity σ=5.19x10-7 (Ω. cm)-1 for x=0 , and decreases with increasing zinc to 3.2x 10-7 (Ω. cm)-1 at x=0.3. Hall effect study appeared that the type of the carriers is p-type, their concentration is 1.6x108cm -3 and increases with increasing the fraction of composition x to 2.6x1010 cm-3 .Also the mobility of the carriers has good relation with zinc content x. | ||
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