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The Optical Properties of GaAs Thin films Prepared by Flash Evaporation Technique | ||
| Tikrit Journal of Pure Science | ||
| Article 1, Volume 13, Issue 2, 2008, Pages 138-140 | ||
| Author | ||
| Rasha A. Abdullah | ||
| Abstract | ||
| A polycrystalline GaAs thin films have prepared by flash evaporation on glass substrate with Thickness ~ 1 µm and substrate temperature (Ts) of about 423 K under vacuum of about 10-5 mbar. The thin films heat treated at different annealing temperatures 423, 473, 523, 573 K. The optical measurements showed that GaAs has direct energy band gap, and the absorption coefficient decreases with increasing the annealing temperatures. The increasing of annealing temperature shifts the peak of transmittance spectrum toward the shorter wavelengths (higher energies) compared with the as-deposited thin film. | ||
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