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Modeling of Nanocrystal Storage Cells | ||
| Al-Rafidain Engineering Journal (AREJ) | ||
| Article 2, Volume 17, Issue 2, 2009, Pages 1-14 PDF (0 K) | ||
| DOI: 10.33899/rengj.2009.38878 | ||
| Authors | ||
| L. S. Ali; S. M. T. Abdul Mawjoud; A. D. Mohammed Saleem | ||
| Abstract | ||
| Abstract The computer program is prepared for applying Montecarlo simulation and modeling for single-electron nanocrystal memories. The nanocrystal memory device of (5×5) quantum dots is used for studying the relationship between, geometrical dimensions, electrical characteristics and charging effects for single electron static programming characteristics. The nanocrystal inter-dot effects are included. All parameters got in the memory simulation programming are studied and discussed. Keywords: Nanocrystal Memories. | ||
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