- All Journals
- Al-Qadisiyah University
- Basrah University
- Kirkuk University
- Mosul University
- The Iraqi Borad for Medical Specialization
- University of Anbar
- University of Technology
- Al Mustafa University
- Al-Zahraa University for Women
- Alnoor University
- Kunooz University
- Misan University
- Ninevah University
- Tikrit University
- University of Al-Hamdaniya
- University of Kerbala
Computation of DC and RF Parameters In Equivalent Circuit of GaAs MESFET | ||
| Tikrit Journal of Pure Science | ||
| Article 1, Volume 13, Issue 3, 2008, Pages 24-31 | ||
| Author | ||
| Mohammed K. Hamood | ||
| Abstract | ||
| In this paper the important Direct Current (DC) and Radio Frequency (RF) circuit element characteristics for Gallium Arsenide Metal Semiconductor Field-effect Transistor (GaAs MESFET) are presented. The GaAs MESFET is characterized in common source configuration by it's two-port S-parameters. A computer program MESFETA is constructed and is developed to implement the above MESFET parameters and demonstrate them in the form | ||
|
Statistics Article View: 71 PDF Download: 15 |
||