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Characterization of Photocurrent Based on ZnO by Al2O3 Doping Nanostructures Grown on n-Si by PLD | ||
| Journal of College of Education | ||
| Article 1, Volume 0, Issue 3, 2017, Pages 141-152 | ||
| Author | ||
| Ali Ahmad Yousif | ||
| Abstract | ||
| The present work aims at studying the of ZnO:Al2O3 films with different doping (1 wt.%, 3 wt.% and 5 wt.%), deposited by pulsed laser deposition technique (PLD) on n-type Si. The electrical and optical properties of processed devices were investigated in temperature of 400°C, oxygen pressure 5×10-1 mbar, irradiation condition, laser wavelength 532 nm and laser fluence energy density 0.4 J/cm2. We report optical and electrical characterizations of newly developed ZnO p-n junction photodiode detectors. The spectral photoresponse and characterization I-V properties show the detector is a promise candidate for UV detection. High performance rectifying was obtained, with high photoresponsivety of 0.25 A/W at 340 nm. The corresponding quantum efficiency was 99.6 %. The results show that ZnO on silicon structures will act as good candidates for making highly efficient photocurrent. | ||
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