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Growth Techniques and Some Physical Properties of InSb Single Crystal | ||
| Baghdad Science Journal | ||
| Article 1, Volume 8, Issue 1, 2011, Pages 141-147 | ||
| Authors | ||
| Fadhil Y. Hadi; Ghuson H. Mohammed; Mohammed K. Khalaf | ||
| Abstract | ||
| Near intrinsic single crystal of InSb compound has been grown from the pure melting by annealing of two-zone furnuse technique and its some physical properties are characterized at room temperature. X-ray diffraction (XRD) observations show that the crystallographic direction is well oriented within (220) plane, while it is indicated that there is a poly crystalline structure for InSb thin films. The absorbance spectra at the fundamental absorption edge has been measured .The values of optical energy gap of single crystal specimens and deposited InSb films were calculated of 0.16 eV and 0.17 eV respectively at room temperature. The aim in this paper is to study and compare the growth of single crystal and thin film to InSb. | ||
| Keywords | ||
| Growth Techniques; InSb Single Crystal; and Physical Properties | ||
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