A. Hadi, H., S. Hasan, H., Jabbar Mujbil AL-Agealy, H. (2011). Theoretical Model For Calculating the Temperature Rise Induced During the Process of Laser Heating of Silicon. , 0(5), 36-45.
Hasan A. Hadi; Hussain S. Hasan; Hadi Jabbar Mujbil AL-Agealy. "Theoretical Model For Calculating the Temperature Rise Induced During the Process of Laser Heating of Silicon". , 0, 5, 2011, 36-45.
A. Hadi, H., S. Hasan, H., Jabbar Mujbil AL-Agealy, H. (2011). 'Theoretical Model For Calculating the Temperature Rise Induced During the Process of Laser Heating of Silicon', , 0(5), pp. 36-45.
A. Hadi, H., S. Hasan, H., Jabbar Mujbil AL-Agealy, H. Theoretical Model For Calculating the Temperature Rise Induced During the Process of Laser Heating of Silicon. , 2011; 0(5): 36-45.

Theoretical Model For Calculating the Temperature Rise Induced During the Process of Laser Heating of Silicon

Journal of College of Education
Article 1, Volume 0, Issue 5, 2017, Pages 36-45
Authors
Hasan A. Hadi; Hussain S. Hasan; Hadi Jabbar Mujbil AL-Agealy
Abstract
CW Nd:YAG Laser heating of silicon are modeled theoretically and the heat diffusion equations solved numerically for estimation of the temperature rise induced during these processes. The thermal properties of the substrate silicon is assumed variations in the case of CW Laser heating . Our results at estimation are agreement with experimental value .
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